Details, datasheet, quote on part number: ABR1010
CategoryDiscrete => Diodes & Rectifiers => General Purpose Diodes
DescriptionAvalanche Bridge Rectifiers
CompanyEIC Semiconductor Incorporated
DatasheetDownload ABR1010 datasheet
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Features, Applications

High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop ldeal for printed circuit board

* Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 6.1 grams

Rating 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Minimum Avalanche Breakdown Voltage 100 µA Maximum Avalanche Breakdown Voltage 100 µA Maximum Average Forward Current = 50°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing < 8.3 ms. ) Maximum Forward Voltage per Diode = 5.0 Amps. Maximum DC Reverse Current °C at Rated DC Blocking Voltage 100 °C Typical Thermal Resistance ( Note 1 ) Operating Junction Temperature Range Storage Temperature Range

ABR UNITS 1010 1000 Volts 700 Volts 1100 1550 Volts Amp. Amps. A2S Volts µA °C/W °C
1 ) Thermal resistance from Junction to case w ith units mounted 8.2cm.x 0.3cm.) Al.-Finned Plate.
HEAT SINK MOUNTING 1.4" x0.06" THK. (7.5x7.5x0.3 cm.) Al. Plate


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