Details, datasheet, quote on part number: MP04TT500-27
PartMP04TT500-27
CategoryDiscrete => Thyristors => Modules
Description480a 2800v Water Cooled Thyristor Module
CompanyDynex Semiconductor
DatasheetDownload MP04TT500-27 datasheet
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Features, Applications

Dual Thyristor Water Cooled Module Advance Information
FEATURES

Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint Alumina (Non Toxic) Isolation Medium Integral Water Cooled Heatsink

KEY PARAMETERS VDRM IT(AV)(per arm) ITSM(per arm) IT(RMS)(per arm) Visol
APPLICATIONS
Motor Control Controlled Rectifier Bridges Heater Control AC Phase Control
Type Number Repetitive Peak Voltages VDRM VRRM V Conditions

Tvj to 125C, IDRM = IRRM = 50mA VDSM = VRSM = VDRM = VRRM + 100V respectively Module outline type code: MP04-W3 Module outline type code: MP04-W3A

Order As: - 18 NPT connection - 18 NPT connection - 18 NPT water connection thread

XX shown in the part number about represents VDRM/100 selection required, eg. MP04TT500-27-W2 Note: When ordering, please use the complete part number. Module outline type code: MP04-W2 (See Package Details for further information) Fig. 2 Module package variants - (not to scale)

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Symbol IT(AV) Parameter Mean on-state current Test Conditions Half wave resistive load, 4.5 Ltr/min IT(RMS RMS value Twater (in) @ 4.5 Ltr/min Twater (in) @ 4.5 Ltr/min ITSM I2t ITSM I2t Visol Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Isolation voltage 10ms half sine, 0 10ms half sine, = 50% VDRM Commoned terminals to base plate. AC RMS, 1 min, 50Hz Twater (in) = 25C Twater (in) = 40C Max. 103 3000 Units A2s V

Symbol Rth(j-w) Parameter Thermal resistance - junction to water (per thyristor) Test Conditions dc, 4.5 Ltr/min Half wave, 4.5 Ltr/min 3 Phase, 4.5 Ltr/min Tvj Tstg Virtual junction temperature Storage temperature range Screw torque Mounting - M6 Electrical connections - M10 Reverse (blocking) Min. 6 (53) Max. Units C/kW C Nm (lb.ins)

Symbol IRRM/IDRM dV/dt dI/dt Parameter Peak reverse and off-state current Linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions t VRRM/VDRM, To 67% VDRM, = 125C From 67% VDRM to 500A, gate source = 125C VT(TO) rT Threshold voltage. (See note 1) On-state slope resistance. (See note 1) At Tvj 125C At Tvj V m Min. Max. 1000 500 Units mA V/s A/s

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.

Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Anode positive with respect to cathode See table fig. 5 Max. Units V mA


 

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