Details, datasheet, quote on part number: MP03TT1250
PartMP03TT1250
CategoryDiscrete => Thyristors => Modules
Description798a 1800v Welding Rated Water Cooled ac Switch Thyristor Module
CompanyDynex Semiconductor
DatasheetDownload MP03TT1250 datasheet
  

 

Features, Applications

Dual Thyristor Water Cooled Welding Module Preliminary Information
FEATURES

Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint Alumina (Non Toxic) Isolation Medium Integral Water Cooled Heatsink

KEY PARAMETERS VDRM ILINE(cont.) ILINE(20cy./50%) ITSM(per arm) Visol
APPLICATIONS
Type Number Repetitive Peak Voltages VDRM VRRM V Conditions
Tvj to 125C, IDRM = IRRM = 30mA VDSM = VRSM = VDRM = VRRM + 100V respectively

Order As: MP03TT1250-XX W4 With 1/4 BSP connection 18 NPT connection 18 NPT connection 18 NPT water connection thread With 1/4 BSP connection

XX shown in the part number about represents VDRM/100 selection required, e.g. MP03TT1250-16-W3 Note: When ordering, please use the whole part number. Auxiliary gate and cathode leads can be ordered separately.

(See package details for further information) Fig. 2 Electrical connections - (not to scale)

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Symbol ILINE Parameter Max. controllable RMS line current - single phase Continuous 50/60Hz 4.5 Ltr/min 20 cycles, 50% duty cycle 4.5 Ltr/min ITSM I2t ITSM I2t Visol Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Isolation voltage Test Conditions Twater (in) = 25C Twater (in) = 40C Twater (in) = 25C Twater (in) 40C 10ms half sine, 0 10ms half sine, = 50% VDRM Commoned terminals to base plate. AC RMS, 1 min, 50Hz Max. 0.21X106 3000 Units A2s V

Symbol Rth(j-w) Parameter Thermal resistance - junction to water (per thyristor) Test Conditions dc, 4.5 Ltr/min Half wave, 4.5 Ltr/min 3 Phase, 4.5 Ltr/min Tvj Tstg Virtual junction temperature Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Weight (nominal) Reverse (blocking) Min. 5(44) 8(70) Max. Refer to drawing Units C/kW C Nm (lb.ins) Nm (lb.ins) g

Symbol IRRM/IDRM dV/dt dI/dt Parameter Peak reverse and off-state current Linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions At VRRM/VDRM, To 67% VDRM, = 125C From 67% VDRM to 500A, gate source = 125C VT(TO) rT Threshold voltage On-state slope resistance At Tvj 125C At Tvj V m Min. Max. 1000 500 Units mA V/s A/s

Note: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor.

Symbol VGT IGT VGD VFGM VFGN VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Test Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Anode positive with respect to cathode See table fig. 5 Max. Units V mA


 

Related products with the same datasheet
MP03TT1250-15
MP03TT1250-16
MP03TT1250-17
MP03TT1250-18
MP03TT1250-XXW1
MP03TT1250-XXW2
MP03TT1250-XXW3
MP03TT1250-XXW4
Some Part number from the same manufacture Dynex Semiconductor
MP03TT1250-15 798a 1800v Welding Rated Water Cooled ac Switch Thyristor Module
MP03TT300 310a 1800v Water Cooled Thyristor Module
MP03TT580 600a 1800v Welding Rated Water Cooled ac Switch Thyristor Module
MP04DD810 812a 3000v Water Cooled Rectifier Diode/dual Diode Module
MP04DD810-24-W2 Dual Rectifier Diode Water Cooled Module Preliminary Information
MP04DD810-26 812a 3000v Water Cooled Rectifier Diode/dual Diode Module
MP04DD810-26-W2 Dual Rectifier Diode Water Cooled Module Preliminary Information
MP04DD810-28 812a 3000v Water Cooled Rectifier Diode/dual Diode Module
MP04DD810-28-W2 Dual Rectifier Diode Water Cooled Module Preliminary Information
MP04DD810-30 812a 3000v Water Cooled Rectifier Diode/dual Diode Module
MP04DD810-30-W2 Dual Rectifier Diode Water Cooled Module Preliminary Information
MP04DD810-XX-W2 812a 3000v Water Cooled Rectifier Diode/dual Diode Module
MP04HB910 915a 3000v Rectifier Diode/dual Diode Module
MP04HBN-16 Dual Thyristor, Thyristor/diode Module
MP04HBN490 Thyristor (SCR) / Diode Modules - AIR Cooled
MP04HBN590
MP04HBP-16 Dual Thyristor, Thyristor/diode Module
MP04HBP490 Thyristor (SCR) / Diode Modules - AIR Cooled
MP04HBP590
MP04HBT-16 Dual Thyristor, Thyristor/diode Module
MP04HBT490 490a 2800v Dual Thyristor, Thyristor/diode Module

DCR1002SF : 1850a 1400v Disc Phase Control Thyristor

MAR9264T95CS : Radiation Hard 8192 X 8 Bit Static RAM

MAS17503CE : Radiation Hard MIL-STD-1750A Interrupt Unit

MAS9264C95FL : Radiation Hard 8192 X 8 Bit Static RAM

MP02X175-16 : Phase Control Dual Scr, Scr/diode Modules

MP04TT1400-XX-W3 : 1185a 2800v Welding Rated Water Cooled ac Switch Thyristor Module

NMAR31750AL : High Performance MIL-STD-1750 Microprocessor

TV3020K : 335a 2000v Stud Rectifier Diode

Same catergory

ABR1004 : Avalanche Bridge Rectifiers. High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop ldeal for printed circuit board * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity.

BUK555-100A/B : Transistor MOSFET. N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK555 Drain-source voltage Drain.

HZB5.6MFA : Diodes for Surge Absorbtion. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

IRGBC20K : Medium Voltage 600-1199 Volts. Insulated Gate Bipolar Transistor Short Circuit Rated Ultrafast Igbt.

PACDN016 : ESD protection->ESD/ETS Protection. Pactive 6 Channel Esd Protection Array With Zener Supply Clamp.

PTF10133 : 85 Watts, 860-960 MHZ Goldmos Field Effect Transistor. The PTF is an internally matched 85 watt LDMOS FET intended for cellular, GSM and D-AMPS applications. This device operates at 50% efficiency with dB of gain. Full gold metallization ensures excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 85 Watts - Power Gain 13.5 dB Typ - Efficiency = 50% Typ Full.

IXGC16N60B2 : Mid-Frequency Range (15KHz-40KHz) Types Single IGBT DCB Isolated mounting tab 􀁺 Meets TO-247AD package Outline 􀁺 High current handling capability 􀁺 Latest generation HDMOSTM process 􀁺 MOS Gate turn-on.

BAT42W/D3 : 0.2 A, 30 V, SILICON, SIGNAL DIODE. s: Package: PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; IF: 200 mA ; RoHS Compliant: RoHS.

BWF236-0 : RESISTOR, WIRE WOUND, 1.5 W, 5; 10 %, 400; 800; 1000; 1800 ppm, 0.1 ohm - 1000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Operating Temperature: -55 to 175 C (-67 to 347 F).

M104I152A000 : CAPACITOR, MICA, 1500 V, 0.1 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrostatic Capacitors: Mica ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 3 (+/- %) ; WVDC: 1500 volts ; Mounting Style: Through Hole.

SD1100YS : 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA. s: Rectifier Configuration / Technology: Schottky ; Package: DPAK, PLASTIC, DPAK-3 ; Number of Diodes: 1 ; VRRM: 100 volts ; IF: 10000 mA.

SS5420US : 3 A, SILICON, RECTIFIER DIODE. s: Configuration: Single ; Package: MELF-B, 2 PIN ; Pin Count: 2 ; Number of Diodes: 1 ; IF: 3000 mA ; trr: 0.4500 ns.

WA0805ML180APT : RESISTOR, VOLTAGE DEPENDENT, 18 V, 1 J, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0805, CHIP, 0805, LEAD FREE ; Power Rating: 0.1000 watts (1.34E-4 HP) ; Operating DC Voltage: 18 volts ; Operating Temperature: -55 to 125 C (-67 to 257 F) ; Standards and Certifications: RoHS.

203JG1K : RESISTOR, TEMPERATURE DEPENDENT, NTC, 20000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 20000 ohms ; Tolerance: 10 +/- % ; Power Rating: 0.0020 watts (2.68E-6 HP).

 
0-C     D-L     M-R     S-Z