Details, datasheet, quote on part number: ADG467BRS
CategoryAnalog & Mixed-Signal Processing => Switches & Multiplexers => Analog Switches
DescriptionTriple Channel Protector (Fault And Overvoltage Protection)
CompanyAnalog Devices
DatasheetDownload ADG467BRS datasheet
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Features, Applications

FEATURES Fault and Overvoltage Protection 40 V Signal Paths Open Circuit with Power Off Signal Path Resistance of RON with Power 44 V Supply Maximum Ratings Low On Resistance ADG466/ADG467 60 typ 1 nA Max Path Current Leakage @ +25C Low R ON Match (5 max) Low Power Dissipation 0.8 W typ Latch-Up Proof Construction APPLICATIONS ATE Equipment Sensitive Measurement Equipment Hot-Insertion Rack Systems

The ADG466 and ADG467 are triple and octal channel protectors, respectively. The channel protector is placed in series with the signal path. The channel protector will protect sensitive components from voltage transience in the signal path whether the power supplies are present or not. Because the channel protection works whether the supplies are present or not, the channel protectors are ideal for use in applications where correct power sequencing can't always be guaranteed (e.g., hotinsertion rack systems) to protect analog inputs. This is discussed further, and some example circuits are given in the Applications section of this data sheet. Each channel protector has an independent operation and consists of an n-channel MOSFET, a p-channel MOSFET and an n-channel MOSFET, connected in series. The channel protector behaves just like a series resistor during normal operation, i.e., (VSS V) < VIN < (VDD 1.5 V). When a channel's analog input exceeds the power supplies (including VDD and VSS = 0 V), one of the MOSFETs will switch off, clamping the output to either VSS V or VDD 1.5 V. Circuitry and signal source protection is provided in the event of an overvoltage or power loss. The channel protectors can withstand overvoltage inputs from +40 V. See the Circuit Information section of this data sheet. The ADG466 and ADG467 can operate off both bipolar and unipolar supplies. The channels are normally on when power is connected and open circuit when power is disconnected. With power supplies 15 V, the on-resistance of the ADG466 and

is 60 typ with a leakage current 1 nA max. When power is disconnected, the input leakage current is approximately 5 nA typ. The ADG466 is available in 8-lead DIP, SOIC and SOIC packages. The ADG467 is available an 18-lead SOIC package and a 20-lead SSOP package.

1. Fault Protection. The ADG466 and ADG467 can withstand continuous voltage inputs from +40 V. When a fault occurs due to the power supplies being turned off or due to an overvoltage being applied to the ADG466 and ADG467, the output is clamped. When power is turned off, current is limited to the microampere level. 2. Low Power Dissipation. 3. Low RON. ADG466/ADG467 60 typ. 4. Trench Isolation Latch-Up Proof Construction. A dielectric trench separates the p- and n-channel MOSFETs thereby preventing latch-up.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: Fax: 781/326-8703 Analog Devices, Inc., 1998

Parameter FAULT PROTECTED CHANNEL Fault-Free Analog Signal Range2 RON Match LEAKAGE CURRENTS Channel Output Leakage, IS(ON) (without Fault Condition) Channel Input Leakage, ID(ON) (with Fault Condition) Channel Input Leakage, ID(OFF) (with Power Off and Fault) Channel Input Leakage, ID(OFF) (with Power Off and Output S/C) POWER REQUIREMENTS IDD ISS VDD/VSS 3 4

+25C B1 VSS + 1.2 VDD +25C B1 VSS + 1.2 VDD Units V min V max typ max Test Conditions/Comments Output Open Circuit V nA typ nA max nA typ nA max nA typ nA max A typ A max A typ A max A typ A max V min V max VD = Open Circuit VDD 0 V, VSS VD = Open Circuit VDD 0 V, VSS 0 V

NOTES 1 Temperature range is as follows: B Version: to +85 C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.

VDD to VSS. +44 V VS, VD, Analog Input Overvoltage with Power ON2. VSS V to VDD 20 V VS, VD, Analog Input Overvoltage with Power +35 V Continuous Current, 20 mA Peak Current, 40 mA (Pulsed at 1 ms, 10% Duty Cycle Max) Operating Temperature Range Industrial (B Version). to +85C Storage Temperature Range. to +125C Junction Temperature. +150C Plastic DIP Package JA, Thermal Impedance. 125C/W Lead Temperature, Soldering (10 sec). +260C SOIC Package JA, Thermal Impedance. 160C/W Lead Temperature, Soldering Vapor Phase (60 sec). +215C Infrared (15 sec). +220C SOIC Package JA, Thermal Impedance. 160C/W Lead Temperature, Soldering Vapor Phase (60 sec). +215C Infrared (15 sec). +220C SSOP Package JA, Thermal Impedance. 130C/W Lead Temperature, Soldering Vapor Phase (60 sec). +215C Infrared (15 sec). +220C

NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages or D will be clamped by the channel protector, see Circuit Information section of the data sheet.

Package Description 8-Lead Plastic DIP 8-Lead Small Outline Package 8-Lead Micro Small Outline Package 18-Lead Small Outline Package 20-Lead Shrink Small Outline Package

CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG466/ADG467 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.


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