|Category||Analog and Digital ICs => Analog Switches and Multiplexers => IC Analog Multiplexers => 5583471|
|Title||8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16|
|Datasheet||Download ADG438FBR datasheet
|Cross ref.||Similar parts: MAX4508ESE, MPC508, MPC509|
|Supply Voltage (VS)||-15 to 15 volts|
|Operating Temperature||-40 to 105 C (-40 to 221 F)|
|Package Type||DIP, PLASTIC, DIP-16|
|Number of Pins||16|
|Number of Devices||1|
|Standards and Certifications||RoHS|
High Performance 4/8 Channel Fault-Protected Analog Multiplexers ADG438F/ADG439F
FEATURES Fast Switching Times tON 250 ns max tOFF 150 ns max Fault and Overvoltage Protection +55 V) All Switches OFF with Power Supply OFF Analog Output of ON Channel Clamped Within Power Supplies If an Overvoltage Occurs Latch-Up Proof Construction Break Before Make Construction TTL and CMOS Compatible Inputs APPLICATIONS Data Acquisition Systems Industrial and Process Control Systems Avionics Test Equipment Signal Routing Between Systems High Reliability Control Systems
The ADG438F/ADG439F are CMOS analog multiplexers, the ADG438F comprising 8 single channels and the ADG439F comprising four differential channels. These multiplexers provide fault protection. Using a series n-channel, p-channel, nchannel MOSFET structure, both device and signal source protection is provided in the event of an overvoltage or power loss. The multiplexer can withstand continuous overvoltage inputs from +55 V. During fault conditions, the multiplexer input (or output) appears as an open circuit and only a few nanoamperes of leakage current will flow. This protects not only the multiplexer and the circuitry driven by the multiplexer, but also protects the sensors or signal sources which drive the multiplexer. The ADG438F switches one of eight inputs to a common output as determined by the 3-bit binary address lines A0, A1 and A2. The ADG439F switches one of four differential inputs to a common differential output as determined by the 2-bit binary address lines A0 and An EN input on each device is used to enable or disable the device. When disabled, all channels are switched OFF.
1. Fault Protection. The ADG438F/ADG439F can withstand continuous voltage inputs +55 V. When a fault occurs due to the power supplies being turned off, all the channels are turned off and only a leakage current of a few nanoamperes flows. 2. ON channel turns OFF while fault exists. 3. Low RON. 4. Fast Switching Times. 5. Break-Before-Make Switching. Switches are guaranteed break-before-make so that input signals are protected against momentary shorting. 6. Trench Isolation Eliminates Latch-up. A dielectric trench separates the p- and n-channel MOSFETs thereby preventing latch-up. 7. Improved OFF Isolation. Trench isolation enhances the channel-to-channel isolation of the ADG438F/ADG439F.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000
Parameter ANALOG SWITCH Analog Signal Range RON Drift RON Match LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) ADG438F ADG439F Channel ON Leakage , IS (ON) ADG438F ADG439F FAULT Output Leakage Current (With Overvoltage) Input Leakage Current (With Overvoltage) Input Leakage Current (With Power Supplies OFF) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS2 tTRANSITION tOPEN tON (EN) tOFF (EN) tSETT, Settling Time 0.1% 0.01% Charge Injection OFF Isolation Channel-to-Channel Crosstalk CS (OFF) CD (OFF) ADG438F ADG439F POWER REQUIREMENTS IDD ISS
+25C B Version to +85C VSS + 1.2 VDD to +105C VSS + 1.2 VDD Units V min V max % max %/°C typ % max nA typ nA max nA typ nA max nA max nA typ nA max nA max nA typ µA max µA typ µA max µA typ µA max V min V max µA max pF typ ns typ ns max ns min ns typ ns max ns typ ns max µs typ µs typ pC typ dB typ dB typ pF typ pF typ pF typ mA typ mA max mA typ mA max VIN 5 V VIN RL 35 pF; 10 V; Test Circuit = 35 pF; +5 V; Test Circuit = 35 pF; +5 V; Test Circuit = 35 pF; +5 V; Test Circuit = 35 pF; 0 , CL= 1 nF; Test Circuit = 15 pF, = 100 kHz; 7 V rms; Test Circuit = 15 pF, = 100 kHz; 7 V rms; Test Circuit 12 Test Conditions/Comments0 V, Test Circuit 10 V, Test Circuit 0 V Test Circuit 6
NOTES 1 Temperature range is as follows: B Version: C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
VDD to VSS. +44 V VDD to GND. +25 V VSS to GND. 25 V VEN, VA Digital Input. V to VDD or 20 mA, Whichever Occurs First VS, Analog Input Overvoltage with Power ON. VSS V to VDD 40 V VS, Analog Input Overvoltage with Power +55 V Continuous Current, 20 mA Peak Current, or D (Pulsed at 1 ms, 10% Duty Cycle max). 40 mA Operating Temperature Range Industrial (B Version). to +105°C Storage Temperature Range. to +150°C Junction Temperature. +150°C Plastic Package JA, Thermal Impedance. 117°C/W Lead Temperature, Soldering (10 sec). +260°C SOIC Package JA, Thermal Impedance Narrow Body. 125°C/W Wide Body. 90°C/W Lead Temperature, Soldering Vapor Phase (60 sec). +215°C Infrared (15 sec). +220°C
*Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.*N = Plastic DIP; = 0.15" Small Outline IC (SOIC); = 0.3" Small Outline IC (SOIC).
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG438F/ADG439F features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic dischar ges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
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