|Category||RF & Microwaves => Amplifiers|
|Description||Low Cost Broadband Silicon Rfic Amplifier<<<>>>the ABA-32563 is a 3V Low-cost Silicon Rfic Amplifier Housed in an Industry Standard SOT-363 Surface-mount Package (6-lead SC70). This Device is Unconditional Stable Combined With Input And Output VSWRS of Less Than 1.5, And Internal Input And Output 50ohm Matching, Making Them Easy to Integrate Into a Variety of Circuit Designs.|
|Company||Agilent Technologies, Inc.|
|Datasheet||Download ABA-31563-BLKG datasheet
Features Operating Frequency ~ 2.5 GHz 19 dB Gain VSWR < 2.0 throughout operating frequency 8.4 dBm Output P1dB Description Agilent's is an economical, easy-to-use, internally 50 matched, silicon monolithic broadband amplifier that offers excellent gain and broadband response from to 2.5 GHz. Packaged in an ultraminiature SOT-363 package, it requires half the board space a SOT-143 package. At 2 GHz, the ABA-32563 offers a small-signal gain of 19 dB, output of 8.4 dBm and 19.5 dBm output third order intercept point. It is suitable for use as wideband applications. They are designed for low cost gain blocks in cellular applications, DBS tuners, LNB and other wireless communication systems. ABA-32563 is fabricated using Agilent's HP25 silicon bipolar process, which employs a doublediffused single polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submicron aluminum multilayer interconnect to achieve superior performance, high uniformity, and proven reliability. Surface Mount Package SOT-363/SC70 19.5 dBm Output 3.5 dB Noise Figure Unconditionally Stable Single 3V Supply (Id = 37 mA) Lead-free Applications Amplifier for Cellular, Cordless, Special Mobile Radio, PCS, ISM, Wireless LAN, DBS, TVRO, and TV Tuner ApplicationsNote: Top View. Package marking provides orientation and identification. "x" is the date code.
Device Voltage, RF output to ground CW RF Input Power (Vcc = 3V) Total Power Dissipation  Junction Temperature Storage Temperature
Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using 150°C Liquid Crystal Measurement Technique. 3. Board (package belly) temperature, Tc, is 25°C. Derate 8.1 mW/°C for > 120.8°C.50 , Pin = -30 dBm, Vcc = 3V, Freq = 2 GHz, unless stated otherwise.
Power Gain (|S21|2 ) Power Gain Flatness, Noise Figure Output Power at 1dB Gain Compression Output Third Order Intercept Point Input VSWR Output VSWR Device Current Group Delay f GHz f GHz
Notes: 1. Measurements taken on 50 test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits.
Figure 6. Output Power for 1 dB Gain Compression vs. Frequency and Voltage.
Figure 7. Output Power for 1 dB Gain Compression vs. Frequency and Temperature.
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