Details, datasheet, quote on part number: BCW29/T1
CategoryDiscrete => Transistors
DescriptionTransistor Sot-23
DatasheetDownload BCW29/T1 datasheet
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Features, Applications

FEATURES Low current (max. 100 mA) Low voltage (max. 32 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP transistor a SOT23 plastic package. NPN complements: BCW31 and BCW32. MARKING TYPE NUMBER BCW29 BCW30 Note p : Made in Hong Kong. t : Made in Malaysia. MARKING C1 C2

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C CONDITIONS open emitter open base; -2 mA open collector MIN. MAX. mW C UNIT

THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted an FR4 printed-circuit board. CHARACTERISTICS 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BCW30 DC current gain BCW29 BCW30 VCEsat VBEsat VBE fT F collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise figure = -10 mA; = -50 mA; = -10 mA; = -50 mA; = -2 mA; VCE = 0; VCB = 1 MHz = -200 A; VCE = 1 kHz; = -2 mA; VCE -5 V CONDITIONS = 0; VCB = 0; VCB = 0; VEB = -10 A; VCE V - PARAMETER thermal resistance from junction to ambient CONDITIONS note 1


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