Details, datasheet, quote on part number: BCV62CQ62702-C2160
PartBCV62CQ62702-C2160
CategoryDiscrete => Transistors
DescriptionTransistor Current Mirror
CompanyN.A.
DatasheetDownload BCV62CQ62702-C2160 datasheet
  

 

Features, Applications

PNP Silicon Double Transistor To be used as a current mirror Good thermal coupling and VBE matching High current gain Low collector-emitter saturation voltage

Symbol VCEO VCBO VEBS IC ICM IBM Ptot Tj Tstg

Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage DC collector current Peak collector current Base peak current (transistor T1) Total power dissipation, 99 C Junction temperature Storage temperature

Thermal Resistance Junction ambient 1) Junction - soldering point RthJA RthJS 240 170 K/W

Electrical Characteristics = 25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics of T1 Collector-emitter breakdown voltage = 10 mA, = 0 Collector-base breakdown voltage = 10 A, = 0 Emitter-base breakdown voltage = 10 A, = 0 Collector cutoff current VCB = 0 Collector cutoff current VCB C DC current gain = 0.1 mA, VCE V DC current gain = 2 mA, VCE 5 V hFE ICBO V(BR)EBO V(BR)CBO V(BR)CEO typ. max.

Collector-emitter saturation = 10 mA, = 100 mA, 5 mA Base-emitter saturation voltage = 10 mA, = 100 mA, 5 mA Base-emitter voltage = 2 mA, VCE = 10 mA, VCE 5 V

Electrical Characteristics = 25C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Base-emitter forward voltage 250 mA Matching of transistor T1 and transistor = 0.5mA and 150 C Thermal coupling of transistor T1 and transistor 1) T1: VCE = 5V Maximum current of thermal stability of IC1

AC characteristics of transistor T1 Transition frequency = 10 mA, VCE = 100 MHz Collector-base capacitance VCB = 1 MHz Emitter-base capacitance VEB = 1 MHz Noise figure = 200 A, VCE = 1 kHz, 200 Hz Short-circuit input impedance = 1 mA, VCE = 1 kHz Open-circuit reverse voltage transf.ratio = 1 mA, VCE = 1 kHz Short-circuit forward current transf.ratio = 1 mA, VCE = 1 kHz Open-circuit output admittance = 1 mA, VCE = 1 kHz

1) Witout emitter resistor. Device mounted on alumina x 0.7mm

 

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