Details, datasheet, quote on part number: BCR523Q62702C2487
CategoryDiscrete => Transistors
DescriptionTransistor Digital Sot23
DatasheetDownload BCR523Q62702C2487 datasheet


Features, Applications

NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=1k,R2=10k)

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, 79 C Junction temperature Storage temperature Symbol Values mW C Unit V

VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg

Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit

Input resistor Resistor ratio AC Characteristics Transition frequency
DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration)
Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration)
Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration)


Some Part number from the same manufacture
BCR553Q62702C2371 Transistor Digital Sot23
BCV27-MR Transistor Bcv27 Minireel 500pcs
BCV47/T1 Transistor Darlington
BCV61CQ62702-C2157 Transistor Current Mirror
BCV62B/T1 Transistor Sot-23
BCV62CQ62702-C2160 Transistor Current Mirror
BCV71/T1 Transistor
BCW29/T1 Transistor Sot-23
BCW60B/T1 Transistor
BCW71-MR Transistor Bcw71 Minireel 500pcs
BCW71/T1 Transistor Sot-23
Same catergory

2SK1191 : . Symbol VDSS VGSS ID (pulse) PD EAS Tch Tstg Ratings (Tch 150C) Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS (on) Ciss Coss on t off min Ratings typ max Unit pF ns .

BAT114-099 : Silicon Switching Diode. High barrier diode for balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type BAT 114-099 Marking S7 Ordering Code (taped & reel) Q62702-A1017 Pin Configuration Package1) SOT-143 Maximum Ratings (per diode) Parameter Reverse voltage Forward current Operation temperature Storage.

BAV99U : . BAV99U is only sold in countries other than Japan. !Application Ultra high speed switching !External dimensions (Units : mm) Type Peak reverse voltage VRM(V) 80 DC reverse voltage VR(V) 80 Peak forward current IFM(mA) 300 Mean rectifying current IO(mA) 100 Storage Surge Power Junction current dissipation temperature (1s) (TOTAL) Isurge(mA) Pd(mW) Tj(C).

IXTH3N120 : . N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions to 150C; RGS 1 M Continuous Transient = 25C, pulse width limited by TJM 25C IS IDM, di/dt 100 A/s, VDD VDSS, = 25C International standard packages Low RDS (on) Rated for unclamped Inductive load.

SI2315DS-T1 : Transistor MOSFET. ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Pulsed Drain Current Continuous Source Current (Diode Conduction)A, B Maximum Power Dissi Dissipation ationA, B Operating Junction and Storage Temperature Range PARAMETER Maximum Junction-to-Ambient Junction to AmbientA v 5 sec Steady State Notes A. Surface Mounted on FR4 Board. t v5 sec. Updates.

STTH1L06 : 600V Ultrafast Turbo 2 Diodes. Turbo 2 Ultrafast High Voltage Rectifier.

NSS1C200 : 100 V, 2.0 A, Low VCE(sat) PNP Transistor SOT223 Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important..

03028-BR562AJZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BR, 0.0056 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0056 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology.

BUL48BR1 : 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.


ERB1885C2E4R0CDX1B : CAPACITOR, CERAMIC, MULTILAYER, 250 V, C0G, 0.000004 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 4.00E-6 microF ; Capacitance Tolerance: 6 (+/- %) ; WVDC: 250 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style:.

J109J05Z : N-CHANNEL, Si, SMALL SIGNAL, JFET. s: Polarity: N-Channel ; rDS(on): 12 ohms ; PD: 625 milliwatts ; Package Type: TO-92, TO-92, 3 PIN ; Number of units in IC: 1.

OM6223SP2 : 30 A, 100 V, 0.085 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.0850 ohms ; Package Type: PLASTIC PACKAGE-12 ; Number of units in IC: 4.

RY2A : SIGNAL DIODE. s: Diode Type: General Purpose.

10CTQ150-003PBF : 10 A, 150 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 10000 mA ; RoHS Compliant: RoHS ; Package: TO-220, TO-220AB, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

2N243 : 60 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN. Item Number Part Number Manufacturer V(BR)CEO Indust Mexi ToshibaCorp Sanyo Elect Sanyo Elect Indust Mexi ToshibaCorp Sanyo Elect ToshibaCorp See Index See Index Sanyo Elect Sanyo Elect Sanyo Elect Sanyo Elect Sanyo Elect Natl Semi Natl Semi Natl Semi Natl Semi Natl Semi Natl Semi Natl Semi Solid Stlnc NECElecslnc Sanyo Elect Sanyo Elect See Index Natl.

0-C     D-L     M-R     S-Z