Details, datasheet, quote on part number: 2SJ172
CategoryDiscrete => Transistors
DescriptionTransistor MOSFET To-220
DatasheetDownload 2SJ172 datasheet
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Features, Applications


Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes PW 10 µs, duty cycle 1% 2. Value = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg

Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS ±20 ­1.0 |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF rr 4.0 Typ Max ­10 A, VGS ­10 A, VGS = 0, diF/dt = 50 A/µs ­5 A, VGS = 6 Unit µA V Test conditions = ­10 mA, VGS ±100 µA, VDS = 0 VGS ±16 V, VDS = 0 VDS ­50 V, VGS ­1 mA, VDS ­5 A, VGS ­5 A, VGS ­5 A, VDS ­10 V*1 VDS ­10 V, VGS = 1 MHz

Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test VGS(off) RDS(on)

Power vs. Temperature Derating 60 Channel Dissipation Pch (W) µs ­30 Drain Current ID (A)
Typical Output Characteristics V ­16 Drain Current ID (A) ­4 V Pulse Test


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