Details, datasheet, quote on part number: PWD13F60TR
CompanyST Microelectronics, Inc.
DatasheetDownload PWD13F60TR datasheet

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Features, Applications
High-density power driver high voltage full bridge with integrated gate driver

Motor drivers for industrial and home appliances Factory automation Fans and pumps HID, ballasts Power supply units DC-DC and DC-AC converters


The is a high-density power driver integrating gate drivers and four N-channel power MOSFETs in dual half bridge configuration. The integrated power MOSFETs have low RDS(on) 320 m and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space. The PWD13F60 device accepts a supply voltage (VCC) extending over a wide range and is protected by means of low-voltage UVLO detection on the supply voltage. The input pins extended range allows an easy interfacing with microcontrollers, DSP units or Hall effect sensors. The device is available in a compact VFQFPN package.


Power system-in-package integrating gate drivers and high-voltage power MOSFETs Low RDS(on) m BVDSS 600 V Suitable for operating as Full bridge Dual independent half bridges Wide driver supply voltage down 6.5 V UVLO protection on supply voltage 15 V compatible inputs with hysteresis and pull-down Interlocking function to prevent cross conduction Internal bootstrap diode Outputs in phase with inputs Very compact and simplified layout Flexible, easy and fast design

3.2 3.3 Absolute maximum ratings. 6 Recommended operating conditions. 7 Thermal data. 7
6.2 6.3 Logic inputs. 15 Bootstrap structure. 16 VCC supply pins and UVLO function. 16
Suggested footprint. 23 Ordering information. 25 Revision history. 25


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