Details, datasheet, quote on part number: STF10LN80K5
TitleMOSFET N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package
CompanyST Microelectronics, Inc.
DatasheetDownload STF10LN80K5 datasheet
STF10LN80K5 photo

Others parts numbering
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Features, Applications
N-channel V, 0.55 typ., 8 A MDmeshTM K5 Power MOSFET a TO-220FP package

Industry's lowest RDS(on) x area Industry's best figure of merit (FoM) Ultra-low gate charge 100% avalanche tested Zener-protected


This very high voltage N-channel Power MOSFET is designed using MDmeshTM K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Table 1: Device summary Order code STF10LN80K5 Marking 10LN80K5 Package TO-220FP Packing Tube

Parameter Gate-source voltage Drain current (continuous) 25 C Drain current (continuous) 100 C Drain current pulsed Total dissipation 25 C Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; TC=25C) Peak diode recovery voltage slope MOSFET dv/dt ruggedness Operating junction temperature Storage temperature

Limited by maximum junction temperature. Pulse width limited by safe operating area ISD A, di/dt100 A/s; VDS peak V(BR)DSS VDS 640 V

Table 3: Thermal data Symbol Rthj-case Rthj-amb Parameter Thermal resistance junction-case Thermal resistance junction-ambient Table 4: Avalanche characteristics Symbol IAR EAS Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting = 25 C, ID = IAR, VDD 50 V) Value 2.7 240 Unit A mJ Value 5 62.5 Unit C/W


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